A Numerical Study Of P-Cuo/N-Azo/ Thin Film Solar Cells Metal Oxide Based Scaps 1-D

Zulfadli Pelawi; H. Alam

Authors

Zulfadli Pelawi Department of Electrical Engineering, Universitas Islam Sumatera Utara, Medan, North Sumatera Indonesia
H. Alam Department of Electrical Engineering, Universitas Islam Sumatera Utara, Medan, North Sumatera Indonesia

Keywords:

Thin film Solar Cells, Metal Oxide semiconductor, AZO, Window Layer, SCAPS-1D

Abstract

In this paper described a photovoltaic characteristics of thin film heterojunction solar cells comprising p-CuO/n-AZO were conducted numerically using a solar cell capacitance simulator (SCAPS-1D). The solar cells device performance p-CuO/n-AZO metal oxide based was investigated, in terms of different n-AZO parameters such as the thickness and carrier concentration. The simulation results indicate that the highest efficiency attain to 9 %, by setting n-AZO thickness and carrier concentration of 50 nm, and 5.0x1018 cm-3 respectively. According to the results obtained, we conclude that the presented thin film solar cell device simulation model using SCAPS 1-D tools could be a part of the solar cell classes with potential promise for photovoltaic applications

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